M29W800DT
۱/41April 2002
M29W800DT
M29W800DB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
n SUPPLY VOLTAGE
– VCC = 2.7V to 3.6V for Program, Erase and
Read
n ACCESS TIME: 70, 90ns
n PROGRAMMING TIME
– ۱۰μs per Byte/Word typical
n 19 MEMORY BLOCKS
– ۱ Boot Block (Top or Bottom Location)
– ۲ Parameter and 16 Main Blocks
n PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithms
n ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
n UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
n TEMPORARY BLOCK UNPROTECTION
MODE
n COMMON FLASH INTERFACE
– ۶۴ bit Security Code
n LOW POWER CONSUMPTION
– Standby and Automatic Standby
n 100,000 PROGRAM/ERASE CYCLES per
BLOCK
n ELECTRONIC SIGNATUR
